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BS170, n-channel enhancement mode fet, transistor (100)
N-Channel Enhancement Mode Field Effect Transistor
BS170, N-Channel Enhancement Mode Field Effect Transistor, TO-92 Package, Quantity 100, Fairchild Semiconductor.
The BS170 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
They can be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
* High density cell design for extremely low RDS(ON).
* Voltage controlled small signal switch.
* High saturation current capability.
